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this is information on a product in full production. may 2014 docid026386 rev 1 1/19 19 stgfw80v60f, stgw80v60f, STGWT80V60F trench gate field-stop igbt, v series 600 v, 80 a very high speed datasheet - production data figure 1. internal schematic diagram features ? maximum junction temperature: t j = 175 c ? tail-less switching off ? v ce(sat) = 1.85 v (typ.) @ i c = 80 a ? tight parameters distribution ? safe paralleling ? low thermal resistance applications ? photovoltaic inverters ? uninterruptible power supply ? welding ? power factor correction ? very high frequency converters description this device is an igbt developed using an advanced proprietary trench gate field stop structure. the device is part of the v series of igbts, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. furthermore, a positive v ce(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. c (2 or tab) g (1) e (3) to-247 1 2 3 to-3p 1 2 3 tab 1 1 1 1 2 3 to-3pf table 1. device summary order code marking package packaging stgfw80v60f gfw80v60f to-3pf tube stgw80v60f gw80v60f to-247 tube STGWT80V60F gwt80v60f to-3p tube www.st.com
contents stgfw80v60f, stgw80v60f, STGWT80V60F 2/19 docid026386 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.1 to-3pf, stgfw80v60f . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.2 to-247, stgw80v60f . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.3 to-3p, STGWT80V60F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
docid026386 rev 1 3/19 stgfw80v60f, stgw80v60f, STGWT80V60F electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-247 to-3p to-3pf v ces collector-emitter voltage (v ge = 0) 600 v i c continuous collector current at t c = 25 c 120 (1) 1. current level is limited by bond wires. a i c continuous collector current at t c = 100 c 80 a i cp (2) 2. pulse width limited by ma ximum junction temperature. pulsed collector current 240 a v ge gate-emitter voltage 20 v p tot total dissipation at t c = 25 c 469 79 w v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; tc = 25 c) 3.5 kv t stg storage temperature range - 55 to 150 c t j operating junction temperature - 55 to 175 c table 3. thermal data symbol parameter value unit to-247 to-3p to-3pf r thjc thermal resistance junction-case 0.32 1.9 c/w r thja thermal resistance junction-ambient 50 c/w
electrical characteristics stgfw80v60f, stgw80v60f, STGWT80V60F 4/19 docid026386 rev 1 2 electrical characteristics t j = 25 c unless otherwise specified. table 4. static characteristics symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 2 ma 600 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 80 a 1.85 2.3 v v ge = 15 v, i c = 80 a t j = 125 c 2.15 v ge = 15 v, i c = 80 a t j = 175 c 2.4 v ge(th) gate threshold voltage v ce = v ge , i c = 1 ma 5 6 7 v i ces collector cut-off current (v ge = 0) v ce = 600 v 100 a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 250 na table 5. dynamic characteristics symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 - 10800 - nf c oes output capacitance - 390 - pf c res reverse transfer capacitance - 220 - pf q g total gate charge v cc = 480 v, i c = 80 a, v ge = 15 v, see figure 28 - 448 - nc q ge gate-emitter charge - 76 - nc q gc gate-collector charge - 184 - nc
docid026386 rev 1 5/19 stgfw80v60f, stgw80v60f, STGWT80V60F electrical characteristics table 6. switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v ce = 400 v, i c = 80 a, r g = 10 , v ge = 15 v, see figure 27 -60-ns t r current rise time - 30 - ns (di/dt) on turn-on current slope - 2200 - a/s t d(off) turn-off delay time - 220 - ns t f current fall time - 17 - ns e on (1) 1. energy loss include reverse recovery of the external diode. the diode is the same of the co-packed stgw80v60df turn-on switching losses - 1.8 - mj e off (2) 2. turn-off losses include also the tail of the collector current. turn-off switching losses - 1 - mj e ts total switching losses - 2.8 - mj t d(on) turn-on delay time v ce = 400 v, i c = 80 a, r g = 10 , v ge = 15 v , t j = 175 c, see figure 27 -60-ns t r current rise time - 30 - ns (di/dt) on turn-on current slope - 2100 - a/s t d(off) turn-off delay time - 240 - ns t f current fall time - 22 - ns e on (1) turn-on switching losses - 3.8 - mj e off (2) turn-off switching losses - 1.25 - mj e ts total switching losses - 5.05 - mj
electrical characteristics stgfw80v60f, stgw80v60f, STGWT80V60F 6/19 docid026386 rev 1 2.1 electrical characteristics (curves) figure 2. power dissipation vs. case temperature for to-247 and to-3p figure 3. collector current vs. case temperature for to-247 and to-3p p tot 300 200 100 0 025 t c ( c ) (w) 100 400 50 75 175 125 150 v ge 15v, t j 175 c gipd041120131017fsr i c 60 30 0 025 t c ( c ) (a) 100 90 50 75 120 175 v ge 15v, t j 175 c 125 150 gipd011020131024fsr figure 4. power dissipation vs. case temperature for to-3pf figure 5. collector current vs. case temperature for to-3pf 3 wrw 7 & ?& : 9 *( ?97 - ??& *,3*)65 , & 7 & ?& $ 9 *( ?97 - ??& *,3*)65 figure 6. output characteristics (t j = 25c) figure 7. output characteristics (t j = 175c) i c 40 0 0 1 v ce (v) (a) 4 80 2 3 v ge =15v 120 9v 11v gipd041120131118fsr i c 40 0 0 1 v ce (v) (a) 4 80 2 3 v ge =15v 120 9v 11v 7v 13v gipd281020131423fsr
docid026386 rev 1 7/19 stgfw80v60f, stgw80v60f, STGWT80V60F electrical characteristics figure 8. v ce(sat) vs. junction temperature figure 9. v ce(sat) vs. collector current figure 10. collector current vs. switching frequency for to-247 and to-3p figure 11. collector current vs. switching frequency for to-3pf figure 12. forward bias safe operating area for to-247 and to-3p figure 13. forward bias safe operating area for to-3pf v ce(sat) 3 2.5 2 1.5 -50 t j ( c ) (v) 100 3.5 0 50 150 v ge = 15v i c = 160a i c = 80a i c = 40a 1 gipd041120131129fsr v ce(sat) 2.5 2 1.5 20 i c ( a ) (v) 80 3 40 60 3.5 100 1 v ge = 15v t j = -40 c t j = 25 c t j = 175 c 120 140 gipd041120131136fsr 0 40 80 120 160 110 ic [a] f [khz] g rectangular current shape, (duty cycle=0.5, v cc = 400v, r =10 , v ge = 0/15 v, t j =175c) tc=80 c tc=100 c gipd041120131144fsr ,f>$@ i>n+]@ * ? uhfwdqjxodufxuuhqwvkdsh gxw\f\foh 9 && 95 9 *( 97 - ?& 7f ? & 7f ? & *,3*)65 i c 100 10 1 1 v ce ( v ) (a) 10 10 s 100 s 1 ms single pulse tc= 25c, t j <= 175c v ge = 15v 100 gipd041120131152fsr , & 9 &( 9 $ ?v ?v pv 6lqjohsxovh 7f ?&7 - ??& 9 *( 9 *,3*)65
electrical characteristics stgfw80v60f, stgw80v60f, STGWT80V60F 8/19 docid026386 rev 1 figure 14. normalized v ge(th) vs junction temperature figure 15. normalized v (br)ces vs. junction temperature figure 16. capacitance variation figure 17. gate charge vs. gate-emitter voltage figure 18. switching loss vs collector current figure 19. switching loss vs gate resistance v ge(th) 1.1 1.0 0.6 -50 t j ( c ) (norm) 0 50 100 150 i c = 1ma v ce = v ge 0.7 0.8 0.9 gipd041120131351fsr v (br)ces 1.1 1.0 0.9 -50 t j ( c ) (norm) 0 50 100 150 i c = 2ma gipd041120131353fsr c 100 v ce (v) (pf) 0.1 1 10 c ies 1000 10000 c oes c res gipd041120131358fsr v ge 8 0 q g (n c ) (v) 0 100 i c = 80a v cc = 480v 4 200 12 300 16 400 500 gipd041120131406fsr e 0 i c (a) (j) 20 40 60 2000 80 100 4000 e on 6000 v cc = 400v, v ge = 15v, r g = 10, t j = 175c 120 e off 140 8000 10000 gipd041120131413fsr e 0 r g () (j) 010 20 2000 4000 6000 30 40 8000 e off v cc = 400 v, v ge = 15 v, i c = 80 a, t j = 175 c e on gipd041120131419fsr
docid026386 rev 1 9/19 stgfw80v60f, stgw80v60f, STGWT80V60F electrical characteristics figure 20. switching loss vs temperature figure 21. switching loss vs collector-emitter voltage figure 22. switching times vs. collector current figure 23. switching times vs. gate resistance figure 24. transfer characteristics e 1000 t j ( c ) (j) 050 2000 3000 4000 100 150 e off v cc = 400v, v ge = 15v, r g = 10, i c = 80a e on gipd041120131424fsr e 0 v ce ( v ) (j) 150 350 2000 4000 6000 e off t j = 175c, v ge = 15v, r g = 10, i c = 80a e on 250 450 gipd041120131428fsr t i c ( a ) (ns) 20 40 60 10 80 t f t j = 175c, v ge = 15v, r g = 10, v cc = 400v t doff 100 t r t don 100 120 140 gipd041120131437fsr t 10 r g ( ) (ns) 01020 100 30 t f t j = 175c, v ge = 15v, i c = 80a, v cc = 400v 40 1000 t don t doff t r gipd041120131444fsr i c 120 80 40 0 67 v ge (v) (a) 89 t j =175c t j =-40c t j =25c v ce =5v gipd041120131324fsr
electrical characteristics stgfw80v60f, stgw80v60f, STGWT80V60F 10/19 docid026386 rev 1 figure 25. thermal impedance for to-247 and to-3p figure 26. thermal impedance for to-3pf zthto2t_a 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k single pulse d=0.5 0.01 0.02 0.05 0.1 0.2 10 -5 10 -4 10 -3 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 zth=k rthj-c =tp/t tp t single pulse =0.5 10 -2 10 -1 10 0 zthtof3t_a
docid026386 rev 1 11/19 stgfw80v60f, stgw80v60f, STGWT80V60F test circuits 3 test circuits figure 27. test circuit for inductive load switching figure 28. gate charge test circuit figure 29. switching waveform am01504v1 am01505v1 am01506v1 90% 10% 90% 10% v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcross 90% 10%
package mechanical data stgfw80v60f, stgw80v60f, STGWT80V60F 12/19 docid026386 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. 4.1 to-3pf, stgfw80v60f figure 30. to-3pf drawing 7627132_d
docid026386 rev 1 13/19 stgfw80v60f, stgw80v60f, STGWT80V60F package mechanical data table 7. to-3pf mechanical data dim. mm min. typ. max. a5.30 5.70 c2.80 3.20 d3.10 3.50 d1 1.80 2.20 e0.80 1.10 f0.65 0.95 f2 1.80 2.20 g10.30 11.50 g1 5.45 h 15.30 15.70 l 9.80 10 10.20 l2 22.80 23.20 l3 26.30 26.70 l4 43.20 44.40 l5 4.30 4.70 l6 24.30 24.70 l7 14.60 15 n1.80 2.20 r3.80 4.20 dia 3.40 3.80
package mechanical data stgfw80v60f, stgw80v60f, STGWT80V60F 14/19 docid026386 rev 1 4.2 to-247, stgw80v60f figure 31. to-247 drawing 0075325_g
docid026386 rev 1 15/19 stgfw80v60f, stgw80v60f, STGWT80V60F package mechanical data table 8. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
package mechanical data stgfw80v60f, stgw80v60f, STGWT80V60F 16/19 docid026386 rev 1 4.3 to-3p, STGWT80V60F figure 32. to-3p drawing 8045950_a
docid026386 rev 1 17/19 stgfw80v60f, stgw80v60f, STGWT80V60F package mechanical data table 9. to-3p mechanical data dim. mm min. typ. max. a4.60 5 a1 1.45 1.50 1.65 a2 1.20 1.40 1.60 b 0.80 1 1.20 b1 1.80 2.20 b2 2.80 3.20 c 0.55 0.60 0.75 d 19.70 19.90 20.10 d1 13.90 e 15.40 15.80 e1 13.60 e2 9.60 e 5.15 5.45 5.75 l 19.50 20 20.50 l1 3.50 l2 18.20 18.40 18.60 ?p 3.10 3.30 q5 q1 3.80
revision history stgfw80v60f, stgw80v60f, STGWT80V60F 18/19 docid026386 rev 1 5 revision history table 10. document revision history date revision changes 22-may-2014 1 initial release.
docid026386 rev 1 19/19 stgfw80v60f, stgw80v60f, STGWT80V60F please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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